| PART |
Description |
Maker |
| GM1015 |
Excellent HFE Linearity HFE : HFE(0.1mA)/HFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| 2SB1114 |
World standard miniature package. High DC current gain hFE=135 to 600.
|
TY Semiconductor Co., Ltd
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| 2SA812 |
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
|
TY Semiconductor Co., Ltd
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| 2SA1562 |
High-hFE/AF Amp Applications
High-hFE,AF Amp Applications
|
Sanyo Semicon Device
|
| 2SA1435 |
High-hFE,AF Amp Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA1436 |
High-hFE,AF Amp Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA1434 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC3651 |
High-hFE/ Low-Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
